Led by Zhejiang University and the Zhejiang University Hangzhou International Science and Technology Innovation Center, and following the CASAS standard development process, two group standards, T/CASAS 034—2024 “Dynamic on-resistance test method for GaN high electron mobility
transistor (HEMT) in zero-voltage-switching-on circuits” and T/CASAS 035—2024 “Dynamic on-resistance test method for GaN high electron mobility transistor (HEMT) in third quadrant conduction mode” were officially released to the industry on September 30, 2024. These standards were developed through standard drafting group meetings, extensive solicitation of opinions, and voting on committee drafts.
T/CASAS 034—2024 “Dynamic on-resistance test method for GaN high electron mobility
transistor (HEMT) in zero-voltage-switching-on circuits” describes the testing method for measuring the dynamic on-resistance of Gallium Nitride High Electron Mobility Transistors (GaN HEMT) in zero-voltage soft-switching circuits. This standard is applicable to a variety of work scenarios, including the production and development, characterization, mass production testing, reliability assessment, and application evaluation of GaN HEMTs. It can be applied to the following devices:
a) GaN enhancement-mode and depletion-mode discrete power electronic devices;
b) GaN integrated power circuits;
c) Wafer-level and package-level products of the above categories.
T/CASAS 035—2024 “Dynamic on-resistance test method for GaN high electron mobility transistor (HEMT) in third quadrant conduction mode” describes the testing method for measuring the dynamic on-resistance of Gallium Nitride High Electron Mobility Transistors (GaN HEMT) in third-quadrant freewheeling mode, including hard turn-off and zero-current turn-off. This standard is applicable to various work scenarios, including the production and development, characterization, mass production testing, reliability assessment, and application evaluation of GaN HEMTs. It can be applied to the following devices:
a) GaN enhancement-mode discrete power electronic devices;
b) GaN integrated power circuits;
c) Wafer-level and package-level products of the above categories.
The drafting units for this group standard include over 10 member companies of the alliance, such as Infineon, Silergy Semiconductor, Juxin Automotive, Jerry Electronics, Shengxinghe Technology, Visbo Systems Technology, Yingfiyuan, Huntkey, Luxshare, China Zhenhua Microelectronics, Xiaomi Communications, Sungrow, and Great Wall Power. These companies are exploring application technologies based on GaN power devices, aiming to establish industry standards for more efficient, reliable, and lightweight power electronic devices.
The PMIC Alliance will collaborate with its member companies to continuously monitor and support the development of standards related to GaN power devices. This effort includes, but is not limited to, the formulation of standards for GaN thermal resistance testing, safe operating area definitions, and other standardization initiatives. Together, they aim to build a comprehensive standard system for GaN power devices and their applications.
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