Currently, conventional soft solder based on silicon power devices offers thermal conductivity comparable to silicon devices, good process compatibility, and a melting point typically below 300°C. These characteristics meet the reliability requirements of silicon-based power devices with junction temperatures below 150°C or 125°C. However, for high-density silicon carbide (SiC) or gallium nitride (GaN) power devices with junction temperatures exceeding 175°C or even 200°C, conventional soft solder systems and connection technologies face technical bottlenecks in terms of high-temperature reliability, heat dissipation, and soldering process compatibility.
Figure 1: Case of fine interconnection (XY precision control < ±30 μm, Z-axis thickness ±3 μm)
Figure 2: Pin–Fin double-sided direct-cooled SiC power module (without integrated Pin–Fin heat sink)
Research Directions:
- Sintered silver/copper fine interconnection methods and packaging module reliability assessment
- Pin–Fin double-sided direct-cooled SiC power module integration technology
- Exploration of high-temperature-resistant, low-inductance, high-density 3D heterogeneous integration technology for SiC and GaN power modules
- Electromigration behavior of the connection layer in high-voltage SiC devices and control strategies
- Nano-copper oxygen-free sintering control methods and low-temperature interconnection technologies
