The three-phase MISN-PFC multilevel converter has the potential to deliver enhanced efficiency and a higher power density. In contrast to other multilevel converters, the MISN converter uniquely integrates the benefits of a single output bus with modular design, which is conducive to the implementation of redundancy protection or hot standby in multilevel networks, thereby enhancing the overall reliability of the converter. Despite these advantages, the MISN converter presents a significant challenge in maintaining voltage balance across its multiple cells. This research conducts a thorough modal analysis to construct a mathematical model that delineates the influence of duty cycle deviation on the voltage imbalance within the MISN converter. The analysis reveals a direct correlation between the magnitude of duty cycle deviation and the severity of voltage imbalance. To address this issue and ensure voltage equalization even in the presence of considerable duty cycle deviation, a novel voltage balancing control strategy is introduced […]
Led by Zhejiang University and the Zhejiang University Hangzhou International Science and Technology Innovation Center, and following the CASAS standard development process, two group standards, T/CASAS 034—2024 “Dynamic on-resistance test method for GaN high electron mobilitytransistor (HEMT) in zero-voltage-switching-on circuits” and T/CASAS 035—2024 “Dynamic on-resistance test method for GaN high electron mobility transistor (HEMT) in third quadrant conduction mode” were officially released to the industry on September 30, 2024. These standards were developed through standard drafting group meetings, extensive solicitation of opinions, and voting on committee drafts. T/CASAS 034—2024 “Dynamic on-resistance test method for GaN high electron mobilitytransistor (HEMT) in zero-voltage-switching-on circuits” describes the testing method for measuring the dynamic on-resistance of Gallium Nitride High Electron Mobility Transistors (GaN HEMT) in zero-voltage soft-switching circuits. This standard is applicable to a variety of work scenarios, including the production and development, characterization, mass production testing, reliability assessment, and application evaluation of GaN […]
