基于200V GaN器件对MISN多电平网络进行迭代优化，在实现与第一代样机相近的效率与功率密度的同时，进一步减小了多电平单元数量。此外，由于输出电压越高，MISN多电平网络的电压应力越大，从而导致其体积过大。为了缓解宽输出电压带来的影响，将低频整流桥（LF-bridge）由两电平半桥拓扑修改为T型三电平拓扑，保证整机的高功率密度。
By modifying the low frequency rectifier bridge (LF-bridge) from two levels to three levels, the voltage stress of MISN module is limited under wide output voltage. So that the volume of MISN module is reduced, and high power density of the converter is maintained. Moreover, based on the 200V GaN devices, the loss of MISN module is further optimized and the number of cells is reduced.
- 输入电压：380Vac±10%
- 输出电压范围：550V~825V
- 功率密度：380W/in³（23.2kW/L）
- 满载效率：99.1%@10kW
- 元胞化、单直流输出母线
- Input voltage：380Vac±10%
- Output Voltage Range: 550V~825V
- Power Density: 380W/in³（23.2kW/L）
- Full Load Efficiency: 99.1%@10kW
- Modularization, Single Output Bus
