GaN开关器件因其材料特性优异，在电力电子领域现已得到广泛应用。由于表面陷阱以及缓冲层陷阱的存在，现阶段的GaN器件存在动态导通电阻衰退问题。在器件开通之后，其导通电阻将会高于其静态导通电阻值，并随着开通时间的增加而逐渐恢复。
目前大多数动态电阻测量工作处于室温，考虑到GaN器件正常工作时会处于较高的温度，本工作基于热阻模型搭建了适用于GaN器件高温动态电阻测试的平台，通过监测器件外壳的壳温来获取器件的结温，采用多组双脉冲的测试方法，测量得到了GaN器件在不同结温下的动态电阻数据。
GaN devices have been widely used in the field of power electronics due to their excellent material properties. Due to the presence of surface traps and buffer layer traps, GaN devices suffer from dynamic resistance degradation. After the device is turned on, its on-resistance will be higher than its static resistance value and gradually recover with increasing on-time.
At present, most dynamic resistance measurements are conducted at room temperature. Considering that GaN devices work normally at higher temperatures, this work builds a bench suitable for high-temperature dynamic resistance testing of GaN devices based on a thermal resistance model. The junction temperature of the device is obtained by monitoring the case temperature of the device case. Multi-group Double Pulse Test (MGDPT) method is used to measure the dynamic resistance data of GaN devices at different junction temperatures.
- 基于热阻模型的高温测试平台
- 多组双脉冲测试
- High Temperature Test Bench Based on a Thermal Resistance Model
- Multi-group Double Pulse Test (MGDPT)
Fig. 1 Heating Scheme
Fig. 2 Thermal Resistance Model
Fig. 3 Stress-Controlled Test Bench
Fig. 4 MGDPT Test Waveform
